Product Summary

The BFG541 is the NPN silicon planar epitaxial transistor, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones(CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV MATV/CATV amplifiers and repeate amplifiers in fibre-optic systems. The BFG541is mounted in a plastic SOT223 envelope.

Parametrics

BFG541 absolute maximum ratings: (1)collector-base voltage, open emitter: 20 V; (2)collector-emitter voltage, RBE =0: 15 V; (3)emitter-base voltage, open collector: 2.5 V; (4)DC collector current: 120 mA; (5)total power dissipation, up to Ts = 140 ℃; note 1: 650 mW; (6)storage temperature: -65 to 150℃; (7)junction temperature: 175℃.

Features

BFG541 features: (1)High power gain; (2)Low noise figure; (3)High transition frequency; (4)Gold metallization ensures excellent reliability.

Diagrams

 BFG541 pins

Image Part No Mfg Description Data Sheet Download Pricing
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BFG541
BFG541

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Data Sheet

Negotiable 
BFG541,115
BFG541,115

NXP Semiconductors

Transistors RF Bipolar Small Signal NPN 15V 9GHZ

Data Sheet

0-1: $0.59
1-25: $0.49
25-100: $0.41
100-250: $0.32