Product Summary

The MRF154 is an n-channel broadband RF power MOSFET designed primarily for linear large-signal output stages in the 2.0-100 MHz frequency range.

Parametrics

MRF154 maximum ratings: (1)Drain–Source Voltage, VDSS: 125 Vdc; (2)Drain–Gate Voltage, VDGO: 125 Vdc; (3)Gate–Source Voltage, VGS: ±40 Vdc; (4)Drain Current — Continuous, ID: 60 Adc; (5)Total Device Dissipation @ TC = 25℃, PD: 1350 w; Derate above 25℃: 7.7 W/℃; (6)Storage Temperature Range, Tstg: –65 to +150 ℃; (7)Operating Junction Temperature, TJ: 200 ℃.

Features

MRF154 characteristics at 50 Volts, 30 MHz: (1)Output Power = 600 Watts; (2)Power Gain = 17 dB (Typ); (3)Efficiency = 45% (Typ).

Diagrams

MRF154 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF154
MRF154

Advanced Semiconductor, Inc.

Transistors RF MOSFET Power RF Transistor

Data Sheet

0-5: $300.00
5-10: $291.00
10-25: $286.20
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF1.6/5.6
MRF1.6/5.6

Other


Data Sheet

Negotiable 
MRF1.6/5.6-AP-2.5C
MRF1.6/5.6-AP-2.5C

Hirose Connector

RF Connectors Obsolete

Data Sheet

Negotiable 
MRF1.6/5.6-AP-59U
MRF1.6/5.6-AP-59U

Hirose Connector

RF Connectors Obsolete

Data Sheet

Negotiable 
MRF1.6/5.6-BCUPA
MRF1.6/5.6-BCUPA

Hirose Connector

RF Connectors Obsolete

Data Sheet

Negotiable 
MRF1.6/5.6-LPJ-179U
MRF1.6/5.6-LPJ-179U

Hirose Connector

RF Connectors Obsolete

Data Sheet

Negotiable 
MRF1.6/5.6-LR-PC-1
MRF1.6/5.6-LR-PC-1

Hirose Connector

RF Connectors Obsolete

Data Sheet

Negotiable